Versatile system for limiting electric field degradation of...

Details Versatile system for limiting electric field degradation of... Versatile system for limiting electric field degradation of...

2006-09-05

2006-09-05

Wojciechowicz, Edward (Department: 2815)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S218000, C438S289000

Reexamination Certificate

active

07101751

ABSTRACT:
The present invention provides a system for limiting degradation of a first semiconductor structure (304) caused by an electric field (314), generated from within the semiconductor substrate (302) by high voltage on a second semiconductor structure (310). A semiconductor device (300) is adapted to reduce the effective magnitude of the field—as realized at structure304—to some fractional component (320), or to render the angle (322)—at which the field approaches the first structure through a first substrate region (306)—acute. Certain embodiments of the present invention provide for: lateral recession of the first semiconductor structure to abut an isolation structure (312), which is disposed between the second semiconductor structure and the first substrate region; lateral recession of the first semiconductor structure from the isolation structure, so as to form a moat therebetween; and a counter-doped region (316) within the first substrate region.

REFERENCES:
patent: 5432366 (1995-07-01), Banerjee et al.
patent: 2003/0139026 (2003-07-01), Lucovsky

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