Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having junction gate
Reexamination Certificate
2007-08-16
2008-12-02
Tran, Thien F (Department: 2895)
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
Having junction gate
C438S196000
Reexamination Certificate
active
07459357
ABSTRACT:
The present invention provides a system for providing a cross-lateral junction field effect transistor (114) having desired high-performance desired voltage, frequency or current characteristics. The cross-lateral transistor is formed on a commercial semiconductor substrate (102). A channel structure (124) is formed along the substrate, having source (120) and drain (122) structures laterally formed on opposites sides thereof. A first gate structure (116) is formed along the substrate, laterally adjoining the channel structure orthogonal to the source and drain structures. A second gate structure (118) is formed along the substrate, laterally adjoining the channel structure, orthogonal to the source and drain structures and opposite the first gate stricture.
REFERENCES:
patent: 5432377 (1995-07-01), Litwin
patent: 6396108 (2002-05-01), Krivokapic et al.
patent: 2007/0262793 (2007-11-01), Kapoor
Howard Gregory E
Swanson Leland
Brady III W. James
Garner Jacqueline J.
Telecky , Jr. Frederick J.
Texas Instruments Incorporated
Tran Thien F
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