Variable threshold semiconductor device and method of...

Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode

Reexamination Certificate

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C257S107000, C257S133000, C257S295000, C257S401000, C257S402000, C257S403000, C257S421000

Reexamination Certificate

active

06969894

ABSTRACT:
An n-channel metal-insulator-semiconductor field-effect transistor (MISFET) that exhibits a variable threshold voltage is disclosed. The resulting device can be incorporated into a number of useful applications, including as part of a memory device, a logic device, etc.

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