Static information storage and retrieval – Systems using particular element – Resistive
Reexamination Certificate
2007-05-18
2009-12-15
Ho, Hoai V (Department: 2827)
Static information storage and retrieval
Systems using particular element
Resistive
C365S203000
Reexamination Certificate
active
07633788
ABSTRACT:
A variable resistive memory device includes a main wordline, a wordline connecting switch in signal communication with the main wordline, a sub-wordline in signal communication with the wordline connecting switch, and a variable resistive memory cell having a variable resistance in signal communication with a first terminal of a switching element, a second terminal of the switching element disposed in signal communication with the sub-wordline; and a method of controlling the voltage of a sub-wordline in a variable resistive memory device includes switchably passing a voltage from a main wordline to the sub-wordline, and substantially blocking forward current flow from the sub-wordline to a variable resistive memory cell of the device.
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Cho Woo-Yeong
Choi Byung-Gil
F. Chau & Associates LLC
Ho Hoai V
Samsung Electronics Co,. Ltd.
Tran Anthan T
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