Variable resistive memory wordline switch

Static information storage and retrieval – Systems using particular element – Resistive

Reexamination Certificate

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C365S203000

Reexamination Certificate

active

07633788

ABSTRACT:
A variable resistive memory device includes a main wordline, a wordline connecting switch in signal communication with the main wordline, a sub-wordline in signal communication with the wordline connecting switch, and a variable resistive memory cell having a variable resistance in signal communication with a first terminal of a switching element, a second terminal of the switching element disposed in signal communication with the sub-wordline; and a method of controlling the voltage of a sub-wordline in a variable resistive memory device includes switchably passing a voltage from a main wordline to the sub-wordline, and substantially blocking forward current flow from the sub-wordline to a variable resistive memory cell of the device.

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patent: 2006/0059405 (2006-03-01), Parkinson
patent: 03058632 (2003-07-01), None

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