Variable resistance memory devices including arrays of...

Details Variable resistance memory devices including arrays of... Variable resistance memory devices including arrays of...

2009-11-06

2011-10-25

Nguyen, Tan T. (Department: 2827)

Static information storage and retrieval

Systems using particular element

Resistive

C365S158000, C365S189200

Reexamination Certificate

active

08045363

ABSTRACT:
A variable resistance memory device may include a first array of first variable resistance memory cells and a second array of second variable resistance memory cells on an integrated circuit chip. Each of the first variable resistance memory cells may be configured to store a first data value by maintaining a first electrical resistance and to store a second data value by maintaining a second electrical resistance. The first and second data values are different, and the second resistance is greater than the first resistance. Each of the second variable resistance memory cells may be configured to store the first data value by maintaining a third electrical resistance and to store the second data value by maintaining a fourth electrical resistance. The fourth resistance may be greater than the third resistance, and the third resistance may be less than the first resistance.

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