Static information storage and retrieval – Systems using particular element – Amorphous
Reexamination Certificate
2007-10-01
2010-10-05
Elms, Richard (Department: 2824)
Static information storage and retrieval
Systems using particular element
Amorphous
C365S148000, C365S153000, C257S296000, C977S754000
Reexamination Certificate
active
07808815
ABSTRACT:
A variable resistance memory device includes a substrate, a plurality of active lines formed on the substrate, are uniformly separated, and extend in a first direction, a plurality of switching devices formed on the active lines and are separated from one another, a plurality of variable resistance devices respectively formed on and connected to the switching devices, a plurality of local bit lines formed on the variable resistance devices, are uniformly separated, extend in a second direction, and are connected to the variable resistance devices, a plurality of local word lines formed on the local bit lines, are uniformly separated, and extend in the first direction, a plurality of global bit lines formed on the local word lines, are uniformly separated, and extend in the second direction, and a plurality of global word lines formed on the global bit lines, are uniformly separated, and extend in the first direction.
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Cho Woo-yeong
Choi Byung-gil
Oh Hyung-rok
Ro Yu-hwan
Byrne Harry W
Elms Richard
F. Chau & Associates LLC
Samsung Electronics Co,. Ltd.
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