Variable resistance memory device

Static information storage and retrieval – Systems using particular element – Amorphous

Reexamination Certificate

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Details

C365S113000, C365S148000

Reexamination Certificate

active

07580278

ABSTRACT:
A variable resistance memory device includes a memory cell array having a plurality of memory cells, a write driver which supplies a step-down set current to the memory cells, where the step-down set current includes a plurality of successive steps of decreasing current magnitude, and a set program control circuit which controls a duration of the step-down set current supplied by the write driver. The set program control circuit controls the duration of the step-down set current in accordance with at least one of data contained in an mode register set (MRS) and a conductive state of a fuse element.

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patent: WO2004/025659 (2004-03-01), None

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