Static information storage and retrieval – Systems using particular element – Amorphous
Reexamination Certificate
2007-10-09
2009-08-25
Nguyen, Tan T. (Department: 2827)
Static information storage and retrieval
Systems using particular element
Amorphous
C365S113000, C365S148000
Reexamination Certificate
active
07580278
ABSTRACT:
A variable resistance memory device includes a memory cell array having a plurality of memory cells, a write driver which supplies a step-down set current to the memory cells, where the step-down set current includes a plurality of successive steps of decreasing current magnitude, and a set program control circuit which controls a duration of the step-down set current supplied by the write driver. The set program control circuit controls the duration of the step-down set current in accordance with at least one of data contained in an mode register set (MRS) and a conductive state of a fuse element.
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Cho Beak-Hyung
Lee Won-Seok
Seo Jong-Soo
Nguyen Tan T.
Samsung Electronics Co,. Ltd.
Volentine & Whitt PLLC
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