Variable resistance memory device

Details Variable resistance memory device Variable resistance memory device

2011-07-05

2011-07-05

Dinh, Son (Department: 2824)

Static information storage and retrieval

Systems using particular element

Resistive

C365S100000, C365S189011

Reexamination Certificate

active

07974116

ABSTRACT:
A variable resistance memory device includes a variable resistance memory cell array including a plurality of variable resistance memory cells; a plurality of global word lines configured to drive the variable resistance memory cell array; and a plurality of local word line decoders. Each of the plurality of local word line decoders includes a first transistor having a gate connected to the global word line. A voltage greater than an operation voltage of one or more of the plurality of local word line decoders is applied to a selected one of the plurality of global word lines.

REFERENCES:
patent: 7808815 (2010-10-01), Ro et al.
patent: 10-0597636 (2006-06-01), None
patent: 10-0674992 (2007-01-01), None
patent: 10-0674997 (2007-01-01), None
Abstract of KR 10-2005-0116569 published Dec. 13, 2005.

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