Active solid-state devices (e.g. – transistors – solid-state diode – Gate arrays
Reexamination Certificate
2005-06-07
2005-06-07
Nguyen, Cuong (Department: 2811)
Active solid-state devices (e.g., transistors, solid-state diode
Gate arrays
C257S203000
Reexamination Certificate
active
06903389
ABSTRACT:
An integrated circuit it comprises a logic cell. The logic cell is without nwell contacts and comprises top and bottom voltage supply wires. The integrated circuit also comprises a first filler cell comprising top and d bottom voltage supply wires and an nwell region coupled to the bottom voltage supply wire. The integrated circuit further comprises a second filler cell with an nwell region coupled to a top voltage supply wire. The integrated circuit still further comprises a third filler cell comprising top and bottom voltage supply wires. The third filler cell also comprising a pair of nwell regions. One of nwell regions is coupled to the top voltage supply wire and the other nwell region is coupled to the bottom voltage supply wire. The standard cell and the filler cells each comprise a PRboundary overlapping a top portion of the nwell region in each cell by a first distance.
REFERENCES:
patent: 2004/0251501 (2004-12-01), Catalasan et al.
Kakerow, R., “Low Power Design Methodologies for Mobile Communication,” Proceedings of the 2002 IEEE International Conference on Computer Design: VLSI Computers and Processors (2002) 6 pages.
PURI, R., et al., “Pushing ASIC Performance in a Power Envelope,” DAC, Anaheim, CA (Jun. 2-6, 2003) pp. 788-793.
Usami, K., et al., “Low-Power Design Methodology and Applications Utilizing Dual Supply Voltages,” Proceedings of the Design Automation Conference (Jan. 2000) pp. 123-128.
Tai Chun-Hui
Tien Li-Chun
Nguyen Cuong
Slater & Matsil L.L.P.
Taiwan Semiconductor Manufacturing Company , Ltd.
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