Photodetector and unit mounted with photodetector

Radiant energy – Photocells; circuits and apparatus – Photocell controlled circuit

Reexamination Certificate

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Details

C257S461000, C257S184000, C257S431000

Reexamination Certificate

active

06909083

ABSTRACT:
A filter layer and a buffer layer are sequentially laminated on a first principal face of a semiconductor substrate, and an island-shaped light absorption layer and a window layer are laminated on top of the buffer layer. A diffusion region in which p-type impurities have been diffused is formed in the window layer. An n-side electrode and a p-side electrode are formed on the buffer layer and the diffusion region, respectively. A light incidence portion is formed on the buffer layer where the light absorption layer has not been formed.

REFERENCES:
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patent: 6043550 (2000-03-01), Kuhara et al.
patent: 6104047 (2000-08-01), Watanabe
patent: 6396117 (2002-05-01), Furukawa et al.
patent: 6617568 (2003-09-01), Matsuda
patent: 2002/0050622 (2002-05-01), Takeuchi
patent: 2002/0110950 (2002-08-01), Matsuda
patent: 60-079781 (1985-05-01), None
patent: 60 130870 (1985-07-01), None
patent: 01-238070 (1989-09-01), None
patent: 2000-36615 (2000-02-01), None

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