Variable contact method and structure

Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – To form ohmic contact to semiconductive material

Reexamination Certificate

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Details

C438S674000, C438S619000, C438S623000, C438S238000, C438S381000, C438S379000

Reexamination Certificate

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06962875

ABSTRACT:
A method of forming a variable contact structure, and the structure so formed, comprising forming a via within the device, wherein a diameter of the via is variably determined depending upon the number of wires to be contacted.

REFERENCES:
patent: 5910755 (1999-06-01), Mishiro et al.
patent: 6022797 (2000-02-01), Ogasawara et al.
patent: 6388208 (2002-05-01), Kiani et al.
patent: 6514849 (2003-02-01), Hui et al.
patent: 6542352 (2003-04-01), Devoe et al.
patent: 6573822 (2003-06-01), Ma et al.
patent: 2002/0064947 (2002-05-01), Itabashi et al.

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