Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – To form ohmic contact to semiconductive material
Patent
1999-03-22
2000-09-26
Elms, Richard
Semiconductor device manufacturing: process
Coating with electrically or thermally conductive material
To form ohmic contact to semiconductive material
438128, 438514, H01L 214763
Patent
active
061241962
ABSTRACT:
Method for forming a variable circuit connector in a wafer having a plurality of circuit modules, is disclosed, which allows selective cut-off and connection between circuit modules, including the steps of forming an insulating layer on an entire surface of the wafer inclusive of a plurality of connecting layers connected to terminals on the circuit modules, and injecting conductive ions into the insulating layer between the connecting layers intended to connect to each other.
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patent: 4373165 (1983-02-01), Tasch, Jr.
patent: 5354704 (1994-10-01), Yang et al.
J. Otterstedt et al., Session 7: Reconfiguration-B, 1994 International Conference on Wafer Scale Integration pp. 315-323.
Laser Repair of Faulty Packaged VLSI Chips, Electronics Letters Nov. 1988 vol. 24 No. 24 pp. 1474-1475.
Elms Richard
Hyundai Electronics Industries Co,. Ltd.
Smith Bradley K.
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