Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having insulated gate
Patent
1995-02-10
2000-02-15
Bowers, Charles
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
Having insulated gate
438778, 42725531, 42725532, H01L 21316
Patent
active
060252227
ABSTRACT:
A method for growing a dielectric film containing Sr on a substrate includes the steps of: dissolving a Sr compound containing Sr((CH.sub.3).sub.5 C.sub.5).sub.2 into an organic solvent or mixing Sr(thd).sub.2 and an amine compound to form a source material; vaporizing the source material to produce a gaseous source material; and decomposing the gaseous source material, obtained in the step of vaporization, in the vicinity of a surface of a substrate held in a reaction chamber, to cause a deposition of a dielectric film containing Sr upon the surface of the substrate.
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Eimori, T. et al. "A Newly Designed Planar Stacked Capacitor Cell with High dielectric Constant Film for 256Mbit DRAM", IEDM93-631.
Kimura et al, `Synthesis of Novel Sr Sources for Metal Organic Chemical Vapor Deposition of SrTiO.sub.3,` Jpn. J. Appl. Phys., Part 1 (1994), 33(9B), 5119-24.
Kimura, Takafumi, `Synthesis of Novel Sr Sources for Metal Organic Chemical Vapor Dep. of SrTiO.sub.3 `, Jpn, J. Appl. Phys., Part 1 (1994(, 33(9B), 5119-24.
Kimura Takafumi
Nakabayashi Masaaki
Yamauchi Hideaki
Bowers Charles
Fujitsu Limited
Whipple Matthew
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