Vapor phase etch trim structure with top etch blocking layer

Details Vapor phase etch trim structure with top etch blocking layer Vapor phase etch trim structure with top etch blocking layer

2005-04-26

2005-04-26

Niebling, John F. (Department: 2812)

Semiconductor device manufacturing: process

Chemical etching

Vapor phase etching

C438S739000, C438S275000

Reexamination Certificate

active

06884734

ABSTRACT:
A blocking layer is formed on a hard mask having an initial thickness. Lines are fabricated by patterning the blocking layer and the hard mask to provide a line segment, the line segment having a first dimension measured across the line segment; reacting a surface layer of the line segment to form a layer of a reaction product on a remaining portion of the line segment; and removing the reaction product without attacking the remaining portion of the line segment and without attacking the blocking layer and the substrate to form the line segment with a second dimension across the line segment that is smaller than the first dimension. The blocking layer prevents the formation of reaction product on the hard mask so that the initial thickness of the hard mask is maintained. The blocking layer can also serve as an ARC layer for photoresist patterning so that the use of an additional film layer is not required.

REFERENCES:
patent: 5972755 (1999-10-01), Hsu
patent: 6156485 (2000-12-01), Tang et al.
patent: 6420097 (2002-07-01), Pike et al.
patent: 6482660 (2002-11-01), Conchieri et al.
patent: 6528363 (2003-03-01), Ku et al.
patent: 6753266 (2004-06-01), Lukanc et al.

Affiliated with

Also associated with

Rating

Vapor phase etch trim structure with top etch blocking layer does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Vapor phase etch trim structure with top etch blocking layer, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Vapor phase etch trim structure with top etch blocking layer will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-3417282