Split gate non-volatile memory devices and methods of...

Details Split gate non-volatile memory devices and methods of... Split gate non-volatile memory devices and methods of...

2008-01-01

2008-01-01

Quach, T. N. (Department: 2826)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S319000, C257S321000, C257SE29264, C257SE21422, C438S257000, C438S267000

Reexamination Certificate

active

07315057

ABSTRACT:
Non-volatile memory devices and methods for fabricating non-volatile memory devices are disclosed. More specifically, split gate memory devices are provided having frameworks that provide increased floating gate coupling ratios, thereby enabling enhanced programming and erasing efficiency and performance.

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