Semiconductor device manufacturing: process – Gettering of substrate – By vapor phase surface reaction
Patent
1997-08-29
2000-08-22
Gulakowski, Randy
Semiconductor device manufacturing: process
Gettering of substrate
By vapor phase surface reaction
438906, 510175, 510511, 134 31, 252 794, 216 79, H01L 21322
Patent
active
061071668
ABSTRACT:
A process for removing a Group I or Group II metal species from a surface of a semiconductor substrate. The process comprises exposing the surface to a gaseous reactant mixture comprising HF, a second compound and a silane compound, and removing volatile products from the surface. The invention is further directed to a process for etching oxides from a semiconductor substrate comprising exposing the surface to a gaseous reactant mixture comprising HF, a second compound and a silane compound, and removing volatile products from the surface.
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Butterbaugh Jeffery W.
Han Yong-Pil
Sawin Herbert H.
Zhang Zhe
FSI International Inc.
Gulakowski Randy
Massachusetts Institute of Technology
Olsen Allan
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