Vapor phase cleaning of alkali and alkaline earth metals

Semiconductor device manufacturing: process – Gettering of substrate – By vapor phase surface reaction

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438906, 510175, 510511, 134 31, 252 794, 216 79, H01L 21322

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active

061071668

ABSTRACT:
A process for removing a Group I or Group II metal species from a surface of a semiconductor substrate. The process comprises exposing the surface to a gaseous reactant mixture comprising HF, a second compound and a silane compound, and removing volatile products from the surface. The invention is further directed to a process for etching oxides from a semiconductor substrate comprising exposing the surface to a gaseous reactant mixture comprising HF, a second compound and a silane compound, and removing volatile products from the surface.

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