Vapor deposition routes to nanoporous silica

Details Vapor deposition routes to nanoporous silica Vapor deposition routes to nanoporous silica

1998-07-07

2000-02-08

Bowers, Charles

Semiconductor device manufacturing: process

Coating of substrate containing semiconductor region or of...

Multiple layers

438763, 438790, H01L 21316

Patent

active

060228121

ABSTRACT:
A process for the manufacture of nanoporous silica dielectric films by vapor deposition of silica precursors on a substrate. The process provides for vaporizing at least one alkoxysilane composition; depositing the vaporized alkoxysilane composition onto a substrate; exposing the deposited alkoxysilane composition to a water vapor, and either an acid or a base vapor; and drying the exposed alkoxysilane composition, thereby forming a relatively high porosity, low dielectric constant, silicon containing polymer composition on the substrate.

REFERENCES:
patent: 5360646 (1994-11-01), Morita
patent: 5804509 (1998-09-01), Cho

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