Coating apparatus – Gas or vapor deposition – Work support
Patent
1997-12-16
2000-05-09
Lund, Jeffrie R
Coating apparatus
Gas or vapor deposition
Work support
118715, C23C 1600
Patent
active
060598859
ABSTRACT:
A vapor deposition apparatus includes a cylindrical hollow reactor having gas supply ports at its upper portion and an exhaust port at its bottom portion. A rotational substrate holder, which seats a wafer substrate, is concentrically placed inside the reactor. The reactor has a straightening vane having gas holes concentrically positioned at its upper portion. Reaction gas is supplied into the reactor to form a thin film on the surface of the wafer substrate on the rotational substrate holder by vapor deposition. In one embodiment, the straightening vane is configured so that the flow rate of the reaction gas in the center portion covering the area of the wafer substrate and the gas flow rate of the reaction gas in the outer portion of the center portion are different from each other. In another embodiment, the reactor is sectioned into upper and lower portions. The inner diameter of the upper portion is smaller than the inner diameter of the lower portion. A link portion connects the lower end of the upper portion and the upper end of the lower portion. The link portion is provided with straightening gas flow-out holes. The rotational substrate holder is positioned below the lower end of the upper portion of the reactor by a predetermined height difference.
REFERENCES:
patent: 4348981 (1982-09-01), Nakanisi et al.
patent: 4989541 (1991-02-01), Mikoshiba et al.
patent: 4997677 (1991-03-01), Wang et al.
patent: 5173336 (1992-12-01), Kennedy
patent: 5221556 (1993-06-01), Hawkins et al.
patent: 5264040 (1993-11-01), Geyling
patent: 5496408 (1996-03-01), Motoda et al.
patent: 5500256 (1996-03-01), Watabe
patent: 5792272 (1998-08-01), van Os et al.
P. N. Gadgil, "Optimization of a Stagnation Point Flow Reactor Design for Metalorganic Chemical Vapor Deposition by Flow Visualization", Journal of Crystal Growth, vol. 134, Dec. 1993, pp. 302-312.
Chaki Katuhiro
Fujii Tatsuo
Honda Takaaki
Iwata Katsuyuki
Mitani Shinichi
Lund Jeffrie R
Toshiba Ceramics Co. Ltd.
Toshiba Kikai Kabushikikaisha
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