Valve and semiconductor fabricating equipment using the same

Details Valve and semiconductor fabricating equipment using the same Valve and semiconductor fabricating equipment using the same

1993-10-19

1995-01-10

Powell, William

Adhesive bonding and miscellaneous chemical manufacture

Delaminating processes adapted for specified product

Delaminating in preparation for post processing recycling step

118728, 156634, 156644, 156656, 156657, B44C 122, C23F 100, C23C 1600

Patent

active

053803965

ABSTRACT:
Disclosed is a gas valve capable of switching gases to be introduced within a vacuum chamber with high speed thereby enhancing the controllability of the composion of a semiconducting thin film growing on a substrate and shortening the time required for growth of the thin film. The gas valve comprises a bendable film between a pair of parallel plate electrodes whereby operating the film by an electrostatic force and opening and closing a port for releasing gas to a substrate mounted on the wall surface of a gas chamber and a port for exhausting an unnecessary gas to an exhaust passage. The gas valve is mounted in the vicinity of the substrate within the vacuum chamber for supplying a working gas in a minimum amount required for the film growth.

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