Coating apparatus – Gas or vapor deposition – With treating means
Patent
1994-06-23
1997-01-07
Bueker, Richard
Coating apparatus
Gas or vapor deposition
With treating means
118725, 118728, 118500, C23C 1600
Patent
active
055912699
ABSTRACT:
A vacuum processing apparatus includes: a processing chamber for performing a film formation process to a semiconductor wafer in a vacuum; a mounting member provided in the processing chamber and having a mounting surface for mounting a target object; an electrostatic chuck, provided to the mounting surface of the mounting member, for chucking the semiconductor wafer; a heating mechanism for heating the semiconductor wafer; and a processing gas supply mechanism for supplying a processing gas for performing the film formation process to the semiconductor wafer into the processing chamber. The mounting member has a base, a first insulating layer formed on the surface of the base, and a second insulating layer formed on the first insulating layer, and has a conductive layer between the first insulating layer and the second insulating layer on the mounting surface side of the mounting member to obtain the above electrostatic chuck constituted by the first insulating layer, the second insulating layer, and the conductive layer, and the heating mechanism has a heating member provided between the first insulating layer and the second insulating layer on the lower surface side of the mounting member.
REFERENCES:
patent: 5155652 (1992-10-01), Logan et al.
patent: 5275683 (1994-01-01), Arami et al.
08/168367, Dec. 17, 1993, Ishikawa et al.
08/187863, Jan. 28, 1994, Deguchi, et al.
08/195282, Feb. 14, 1994, Kawakami, et al.
Arami Jun-ichi
Deguchi Youichi
Ishikawa Kenji
Kawada Nobuo
Yagi Hironori
Bueker Richard
Tokyo Electron Limited
Tokyo Electron Tohoku Limited
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