Vacuum plasma processor method

Details Vacuum plasma processor method Vacuum plasma processor method

2005-05-24

2005-05-24

Norton, Nadine G. (Department: 1765)

Semiconductor device manufacturing: process

Chemical etching

Vapor phase etching

C438S707000, C438S710000, C438S712000, C438S714000, C438S729000

Reexamination Certificate

active

06897156

ABSTRACT:
200 mm and 300 mm wafers are processed in vacuum plasma processing chambers that are the same or have the same geometry. Substantially planar excitation coils having different geometries for the wafers of different sizes excite ionizable gas in the chamber to a plasma by supplying electromagnetic fields to the plasma through a dielectric window at the top of the chamber. Both coils include plural symmetrical, substantially circular turns coaxial with a center point of the coil and at least one turn that is asymmetrical with respect to the coil center point. Both coils include four turns, with r.f. excitation being applied to the turn that is closest to the coil center point. The turn that is third farthest from the center point is asymmetric in the coil used for 200 mm wafers. The two turns closest to the coil center point are asymmetric in the coil used for 300 mm wafers.

REFERENCES:
patent: 4948458 (1990-08-01), Ogle
patent: 5401350 (1995-03-01), Patrick et al.
patent: 5759280 (1998-06-01), Holland et al.
patent: 5800619 (1998-09-01), Holland et al.
patent: 5838111 (1998-11-01), Hayashi et al.
patent: 5919382 (1999-07-01), Qian et al.
patent: 5975013 (1999-11-01), Holland et al.
patent: 6028285 (2000-02-01), Khater et al.
patent: 6077385 (2000-06-01), Kimura et al.
patent: 6143144 (2000-11-01), Golovato et al.
patent: 6164241 (2000-12-01), Chen et al.
patent: 6251241 (2001-06-01), Shin et al.
patent: 6268700 (2001-07-01), Holland et al.
patent: 6319355 (2001-11-01), Holland
patent: 0813227 (1997-12-01), None
patent: 10321399 (1998-04-01), None
Patent Abstracts of Japan, vol. 1999, No. 03, Mar. 31, 1999 and JP 10 321399A (Matsushita Electric Ind Co Ltd), Dec. 4, 1998 abstract.
Munsat T. et al, “Two New Planar Coil Designs for a High Pressure Radio Frequency Plasma Source,” Applied Physics Letters, American Institute of Physics. New York, US, vol. 66, No. 17 Apr. 24, 1995, pp. 2180-2182.

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