UV treatment for low-k dielectric layer in damascene structure

Details UV treatment for low-k dielectric layer in damascene structure UV treatment for low-k dielectric layer in damascene structure

2006-04-14

2008-09-30

Lee, Calvin (Department: 2892)

Semiconductor device manufacturing: process

Radiation or energy treatment modifying properties of...

Reexamination Certificate

active

07429542

ABSTRACT:
An UV treatment for making a low-k dielectric layer having improved properties in a damascene structure. A low-k dielectric layer in a damascene structure is subjected to an UV treatment with He gas or H2gas to eliminate etching damage to the exposed surfaces of the low-k dielectric layer.

REFERENCES:
patent: 6319809 (2001-11-01), Chang et al.
patent: 2006/0286306 (2006-12-01), Ohara et al.

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