UV nanoimprint lithography process using elementwise...

Details UV nanoimprint lithography process using elementwise... UV nanoimprint lithography process using elementwise...

2005-09-13

2005-09-13

Smoot, Stephen W. (Department: 2813)

Semiconductor device manufacturing: process

Chemical etching

Combined with coating step

C438S780000, C438S782000, C438S795000, C977S726000

Reexamination Certificate

active

06943117

ABSTRACT:
A UV nanoimprint lithography process for forming nanostructures on a substrate. The process includes depositing a resist on a substrate; contacting a stamp having formed thereon nanostructures at areas corresponding to where nanostructures on the substrate are to be formed to an upper surface of the resist, and applying a predetermined pressure to the stamp in a direction toward the substrate, the contacting and applying being performed at room temperature and at low pressure; irradiating ultraviolet rays onto the resist; separating the stamp from the resist; and etching an upper surface of the substrate on which the resist is deposited. The stamp is an elementwise embossed stamp that comprises at least two element stamps, and grooves formed between adjacent element stamps and having a depth that is greater than a depth of the nanostructures formed on the element stamps.

REFERENCES:
patent: 5772905 (1998-06-01), Chou
patent: 6517977 (2003-02-01), Resnick et al.
patent: 6656398 (2003-12-01), Birch et al.
patent: 2003/0215577 (2003-11-01), Willson et al.
patent: 2004/0009673 (2004-01-01), Sreenivasan et al.

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