UV/halogen treatment for dry oxide etching

Details UV/halogen treatment for dry oxide etching UV/halogen treatment for dry oxide etching

1996-10-31

1999-07-13

Ford, John M.

Etching a substrate: processes

Gas phase etching of substrate

216 79, 216 62, 216 65, 216 66, C09K 1308, C23F 112, C23C 2234

Patent

active

059222190

ABSTRACT:
The uniformity of SiO.sub.2 etching over the surface area of a substrate using a conventional SiO.sub.2 etching reaction, such as a HF/ROH reaction where R is H or alkyl, is improved when the substrate is pretreated before the etch reaction. In the pretreatment the substrate within a process chamber is exposed to UV illuminated halogen gas. Suitable halogen gases are fluorine and chlorine. Oxygen may optionally also be included with the halogen gas. The pretreatment renders the etching uniformity results substantially independent of the storage history of the wafer.

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