Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having insulated gate
Reexamination Certificate
2006-03-28
2006-03-28
Booth, Richard A. (Department: 2812)
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
Having insulated gate
C438S954000
Reexamination Certificate
active
07018896
ABSTRACT:
A method of protecting a SONOS flash memory cell from UV-induced charging, including fabricating a SONOS flash memory cell in a semiconductor device; and depositing over the SONOS flash memory cell at least one UV-protective layer, the UV-protective layer including a substantially UV-opaque material. In one embodiment, the device includes a substantially UV-opaque sub-layer of a contact cap layer or a substantially UV-opaque contact cap layer.
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Cheng Ning
Erhardt Jeff P.
Ferguson Clarence B.
Gottipati Tyagamohan
Halliyal Arvind
Advanced Micro Devices , Inc.
Renner , Otto, Boisselle & Sklar, LLP
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