UV assisted gallium nitride growth

Details UV assisted gallium nitride growth UV assisted gallium nitride growth

1996-11-27

1998-07-14

Niebling, John

Semiconductor device manufacturing: process

Formation of semiconductive active region on any substrate

Amorphous semiconductor

438485, H01L 21205

Patent

active

057803552

ABSTRACT:
A method for producing Group III nitride films with high indium content and superior optical quality. The Group III nitride film will produce light in the ultraviolet, blue, green, yellow, and red spectral regions. This will enable fabrication of full-color displays and produce a reliable white light source. A metal organic chemical vapor deposition (MOCVD) process in combination with a photochemical process reduces the growth temperature required to produce optical quality Group III nitride films.

REFERENCES:
patent: 4910044 (1990-03-01), Yamazaki et al.
patent: 5210051 (1993-05-01), Carter et al.
patent: 5585648 (1996-12-01), Tischler
patent: 5633192 (1997-05-01), Moustakas et al.

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