Using sense lines to thermally control the state of an MRAM

Details Using sense lines to thermally control the state of an MRAM Using sense lines to thermally control the state of an MRAM

2008-07-08

2008-07-08

Dickey, Thomas L (Department: 2826)

Active solid-state devices (e.g., transistors, solid-state diode

Responsive to non-electrical signal

Magnetic field

C365S173000

Reexamination Certificate

active

07397098

ABSTRACT:
An aspect of the present invention is an MRAM device. The MRAM device includes a plurality of magnetic memory elements, a sense line coupled to the plurality of magnetic memory elements for sensing a magnetic orientation of each of the plurality of magnetic memory elements wherein the sense line includes a first via and a second via and wherein the sense line is utilized to thermally assist in switching a magnetic orientation of at least one of the plurality of magnetic memory elements.

REFERENCES:
patent: 6130835 (2000-10-01), Scheuerlein
patent: 2004/0125673 (2004-07-01), Duaghton et al.
patent: 2005/0104146 (2005-05-01), Nickel et al.

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