Semiconductor device manufacturing: process – Chemical etching – Combined with the removal of material by nonchemical means
Reexamination Certificate
2009-11-24
2011-10-18
Hoang, Quoc (Department: 2892)
Semiconductor device manufacturing: process
Chemical etching
Combined with the removal of material by nonchemical means
C451S005000, C257SE21583
Reexamination Certificate
active
08039397
ABSTRACT:
A method of controlling the polishing of a substrate includes polishing a substrate on a first platen using a first set of parameters, obtaining first and second sequences of measured spectra from first and second regions of the substrate with an in-situ optical monitoring system, generating first and second sequences of values from the first and second sequences of measured spectra, fitting first and second linear functions to the first and second sequences of values, determining a difference between the first linear function and the second linear function, adjusting at least one parameter of a second set of parameters based on the difference, and polishing the substrate on a second platen using the adjusted parameter.
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Benvegnu Dominic J.
David Jeffrey Drue
Lee Harry Q.
Swedek Boguslaw A.
Tu Wen-Chiang
Applied Materials Inc.
Fish & Richardson P.C.
Hoang Quoc
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