Use of ultra-high magnetic fields in resputter and plasma...

Details Use of ultra-high magnetic fields in resputter and plasma... Use of ultra-high magnetic fields in resputter and plasma...

2011-03-01

2011-03-01

Alanko, Anita K (Department: 1713)

Semiconductor device manufacturing: process

Chemical etching

Combined with coating step

C438S696000, C438S710000, C438S720000, C438S732000, C216S037000, C216S067000, C216S070000, C216S075000, C216S078000

Reexamination Certificate

active

07897516

ABSTRACT:
Methods for resputtering and plasma etching include an operation of generating an ultra-high density plasma using an ultra-high magnetic field. For example, a plasma density of at least about 1013electrons/cm3is achieved by confining a plasma using a magnetic field of at least about 1 Tesla. The ultra-high density plasma is used to create a high flux of low energy ions at the wafer surface. The formed high density low energy plasma can be used to sputter etch a diffusion barrier or a seed layer material in the presence of an exposed low-k dielectric layer. For example, a diffusion barrier material can be etched with a high etch rate to deposition rate (E/D) ratio (e.g., with E/D>2) without substantially damaging an exposed dielectric layer. Resputtering and plasma etching can be performed, for example, in iPVD and in plasma pre-clean tools, equipped with magnets configured for confining a plasma.

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