Use of pulsed-DC wafer bias for filling vias/trenches with metal

Details Use of pulsed-DC wafer bias for filling vias/trenches with metal Use of pulsed-DC wafer bias for filling vias/trenches with metal

1997-06-23

2000-04-18

McDonald, Rodney

Chemistry: electrical and wave energy

Processes and products

Vacuum arc discharge coating

20419212, 20419213, 20419217, 20429803, 20429806, 20429808, 20419215, C23C 1434

Patent

active

060511141

ABSTRACT:
The present invention provides a method and apparatus for preferential PVD conductor fill in an integrated circuit structure. The present invention utilizes a high density plasma for sputter deposition of a conductive layer on a patterned substrate, and a pulsed DC power source capacitively coupled to the substrate to generate an ion current at the surface of the substrate. The ion current prevents sticking of the deposited material to the field areas of the patterned substrate, or etches deposited material from the field areas to eliminate crowning or cusping problems associated with deposition of a conductive material in a trench, hole or via formed on the substrate.

REFERENCES:
patent: 4756810 (1988-07-01), Lamont, Jr. et al.
patent: 4963239 (1990-10-01), Shimamura et al.
patent: 4999096 (1991-03-01), Nihei et al.
patent: 5126028 (1992-06-01), Hurwitt et al.
patent: 5302266 (1994-04-01), Grabarz et al.
patent: 5303139 (1994-04-01), Mark
patent: 5346600 (1994-09-01), Nieh et al.
patent: 5639357 (1997-06-01), Xu
patent: 5770023 (1998-06-01), Sellers
Holber et al. "Copper deposition by electron cyclotron resonance plasma," J. Vac. Sci. Technol. A 11(6), pp. 2903-2910, Dec. 1993.
Patent Cooperation Treaty PCT International Search Report, 6 pages.
Keizo Suzuki, Sadayuki Okudaira, Noriyuki Sakudo and Ichiro Kanomata, "Microwave Plasma Etching," Journal of Applied Physics, vol. 16, No. 11, Nov., 1977 pp. 1979-1984.
Keizo Suzuki, Ken Ninomiya and Shigeru Nishimatsu, "Microwave plasma etching," Pergamon Press Ltd., vol. 34/No. 10/11 pp. 953-957, 1984.
L. J. Kochel, "Pressure control of rf bias for sputtering," Rev. Sci. Instrum., vol. 47, No. 12, Dec., 1976, pp. 1555-1557.
S. Hamaguchi and S. M. Rossnagel, "Simulations of trench- lling pro les under ionized magnetron sputter metal deposition," J. Vac. Sci. Technol. B 13(2), Mar./Apr. 1995, pp. 183-191.
S.M. Rossnagel and R. Sward, "Collimated magnetron sputter deposition with grazing angle ion bombardment," J. Vac. Sci. Technol. A, vol. 13 No. 1. Jan./Feb. 1995, pp. 156-158.
Toshiaki Yasui, Hirokazu Tahara, and Takao Yoshikawa, "Electron cyclotron resonance plasma generation using a planar ring-cusp magnetic field and a reentrant coazial cavity," J. Vac. Sci. Technol. A 13(4), Jul./Aug. 1995, pp. 2105-2109.
I. S. Park, S. I. Lee, Y. J. Wee, W. S. Jung, G. H. Choi, C. S. Park, S. H. Park, S. T. Ahn, M. Y. Lee, Y. K. Kim and R. Reynolds, A Noval A1-Reflow Process Using Surface Modification by the ECR Plasma Treatment and Its Application to the 256Mbit DRAM, IEDM 94, 109-112, pp. 5.4.1-5.4.4, 1994.
W. M. Holber, J. S. Logan, H. J. Grabarz, J. T. C. Yeh, and J. B. O. Caughman, "Copper deposition by electron cyclotron resonance plasma," J. Vac. Sci. Technol. A 11(6), Nov./Dec. 1993 pp. 2903-2910.
Peter F. Cheng, and S. M. Rossnagel, "Directional deposition of Cu into semiconductor trench structures using ionized magnetron sputtering," J. Vac. Sci. Technol. B 13(2), Mar./Apr. 1995 pp. 203-208.
P. Kidd, "A magnetically confined and electron cyclotron resonance heated plasma machine for coating and ion surface modification use," J. Vac. Sci. Technol A. vol. 9 No. 3 May/Jun. 1991 pp. 466-473.
M. Yamashita, "Fundamental characteristics of built-in high-frequency coil-type sputtering apparatus, " J. Vac. Sci. Technol. A. 7(2), Mar./Apr. 1989, pp. 151-158.
Seiji Samukawa, "Wave propagation and plasma uniformity in an electron cyclotron reasonance plasma," J. Vac. Sci. Tecnol. A 11(5), Sep./Oct. 1993, pp. 2572-2576.
Christopher Apblett, Manuel F. Gonzales, J. Charles Barbour, Lisa-Marie Gonzales-Peterson, Matthew Kovacs, Bryan Kuhr, "Silicon nitride growth in a high-density plasma system," Nov. 1995 Solid State Technology pp. 73-74, 76, 78 and 80.
S. M. Gorbatkin, D. B. Poker, R. L. Rhoads, C. Doughty, L. A. Berry and S. M. Rossnagel, "Cu metallization using a permanent magnet electron cyclotron resonance microwave plasma/sputtering hybrid system," J. Vac. Sci. Technol. B 14(3), May/Jun. 1996, pp. 1853-1859.
Ward D. Getty, Joseph B. Geddes, "Size-scalable, 2.45 GHz electron cyclotron resonance plasma source using permanent magnets and waveguide coupling," J. Vac. Sci. Technol. B 12(1),Jan./Feb. 1994, pp. 408-415.
Seitara Matsuo, "Reactive Ion-Beam Etching and Plasma Deposition Techniques Using Eelctron Cyclotron Resonance Plasmas," Applied Solid State Science, Academic Press, Inc., 1985 pp. 75-117.
H. Koening and E. Stern, "RF Sputtering System with Variable Substrate Bias," IBM Technical Disclosure Bulletin vol. 13, No. 2 (Jul. 1970), pp. 323-324.
U. S. Patent application Entitled "Step Coverage and Overhang Improvement by Pedestal Bias Voltage Modulation, " Serial No. 08/989,759; filing Date Dec. 12, 1997; Inventor: Yoichiro Tanaka.
U.S. application No. 08/768,058, Ramaswani et al., filed Dec. 16, 1996.

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