Use of polysilsesquioxane without hydroxyl group for forming mas

Details Use of polysilsesquioxane without hydroxyl group for forming mas Use of polysilsesquioxane without hydroxyl group for forming mas

1986-03-03

1987-04-14

Kittle, John E.

Radiation imagery chemistry: process, composition, or product th

Imaging affecting physical property of radiation sensitive...

Forming nonplanar surface

430325, 430296, 430270, 430271, 430312, 430313, 430327, 430286, 156643, 528 10, G03C 516, G03F 726

Patent

active

046578439

ABSTRACT:
A high-energy radiation-sensitive pattern-forming resist material consisting of polysilsesquioxane having no hydroxyl group in its molecule. The pattern-forming material of this invention has an improved sensitivity to high-energy radiation exposure, a high resistance to dry etching, a high resolution capability, and an improved thermal stability.

REFERENCES:
patent: 4600685 (1986-07-01), Kitakohji et al.
W. S. DeForest, Photoresist: Materials and Processes, McGraw-Hill Book Company, New York, N.Y., 1975, pp. 101-102, 146-147.

Affiliated with

Also associated with

Rating

Use of polysilsesquioxane without hydroxyl group for forming mas does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Use of polysilsesquioxane without hydroxyl group for forming mas, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Use of polysilsesquioxane without hydroxyl group for forming mas will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-1785362