Use of oxalyl chloride to form chloride-doped silicon dioxide fi

Details Use of oxalyl chloride to form chloride-doped silicon dioxide fi Use of oxalyl chloride to form chloride-doped silicon dioxide fi

1992-05-29

1998-02-24

Dang, Trung

Semiconductor device manufacturing: process

Coating of substrate containing semiconductor region or of...

By reaction with substrate

438770, 438787, 438790, H01L 21469

Patent

active

057211760

ABSTRACT:
A process of forming chlorine-doped silicon dioxide films on a silicon substrate comprising oxidizing said silicon substrate in the presence of a chlorine source, thereby forming said chlorine-doped silicon dioxide film on said silicon substrate, said chlorine source being oxalyl chloride.

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