Use of chromeless phase shift features to pattern large area...

Details Use of chromeless phase shift features to pattern large area... Use of chromeless phase shift features to pattern large area...

2006-06-06

2006-06-06

Huff, Mark F. (Department: 1756)

Radiation imagery chemistry: process, composition, or product th

Imaging affecting physical property of radiation sensitive...

Making electrical device

C430S315000, C438S666000, C438S670000

Reexamination Certificate

active

07056645

ABSTRACT:
Method for using chromeless phase shift lithography (CPL) masks to pattern large line/space geometries. The method comprises using light at a wavelength of one of 248 nm, 193 nm, or 157 nm to illumimate a CPL mask comprising a reticle having a plurality of phase-shifting features interspersed with non-phase-shifting areas arranged in a substantially alternating two-dimensional pattern. When light passes through the phase-shifting features it is phase-shifted relative to light passing through the non-phase-shifting areas of the CPL mask. The phase-shifted light and non-phase-shifted light passing through the reticle are then projected onto a resist layer applied over a semiconductor substrate. The resultant composite aerial image intensity distribution is such that an area of the resist having a shape defined by a periphery of a corresponding pattern of phase-shifting features is sufficiently exposed to pattern a large area feature in the resist. Subsequent semiconductor processing operations may then be performed to pattern a corresponding feature on the semiconductor substrate.

REFERENCES:
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patent: 5766829 (1998-06-01), Cathey et al.
patent: 6563566 (2003-05-01), Rosenbluth et al.
Levinson, Harry J., Principles of Lithography, 2001, SPIE—The International Society for Optical Engineering, pp. 261-263.

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