Use of a single mask during the formation of a transistor's...

Details Use of a single mask during the formation of a transistor's... Use of a single mask during the formation of a transistor's...

2011-02-22

2011-02-22

Sarkar, Asok K (Department: 2891)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C257SE21431, C257SE21437, C257SE21632, C438S199000

Reexamination Certificate

active

07892931

ABSTRACT:
A method300for forming a transistor's drain extension70and recessed strained epi regions150with a single mask step306. In an example embodiment, the method300may include forming a patterned photoresist layer200over a protection layer190in a NMOS region50and then etching exposed portions of the protection layer190in the PMOS region60to form extension sidewalls210on the transistors30in the PMOS region60plus a protective hardmask220over the NMOS region50. The method300may further include forming the extension regions70for the PMOS region transistors30, performing a recess etch240of active regions230of the PMOS region transistors30, and forming the recessed strained epi regions150.

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