Use of a selective hard mask for the integration of double...

Details Use of a selective hard mask for the integration of double... Use of a selective hard mask for the integration of double...

2005-08-23

2005-08-23

Fourson, George (Department: 2823)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S199000, C438S200000, C438S232000, C438S276000, C438S530000, C438S549000

Reexamination Certificate

active

06933188

ABSTRACT:
A process for integrating the fabrication of double diffused drain (DDD) MOSFET devices with the fabrication sub-micron CMOS devices, has been developed. The process features formation of an insulator hard mask shape on an underlying polysilicon gate structure shape in the DDD MOSFET region, while only a polysilicon gate structure shape is formed in the CMOS device region. High energy ion implantation procedures are employed to form the deep source/drain regions of the DDD MOSFET devices with the insulator hard mask shape preventing the high energy implantation procedure from disturbing the underlying channel region. An anneal procedure used activate and drive—in the implanted ions in the deep source/drain region of the DDD MOSFET device is followed by formation of the shallower source/drain regions of the sub-micron CMOS devices.

REFERENCES:
patent: 5516717 (1996-05-01), Hsu
patent: 5959418 (1999-09-01), Gotou
patent: 6063706 (2000-05-01), Wu
patent: 6069031 (2000-05-01), Wu
patent: 6124159 (2000-09-01), Chu
patent: 6133096 (2000-10-01), Su et al.
patent: 6297108 (2001-10-01), Chu
patent: 6333234 (2001-12-01), Liu
patent: 6570214 (2003-05-01), Wu
patent: 6579781 (2003-06-01), Hamilton et al.
patent: 6642076 (2003-11-01), Yaung et al.
patent: 6713821 (2004-03-01), Fan et al.

Affiliated with

Also associated with

Rating

Use of a selective hard mask for the integration of double... does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Use of a selective hard mask for the integration of double..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Use of a selective hard mask for the integration of double... will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-3459344