Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having insulated gate
Patent
1998-11-17
2000-09-12
Booth, Richard
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
Having insulated gate
438594, 257318, H01L 218247
Patent
active
061177326
ABSTRACT:
A method for fabricating a single polysilicon, non-volatile memory device, has been developed. The method features the use of a metal structure, comprised to contact an underlying control gate region, located in the semiconductor structure, in addition to providing the upper electrode, for a capacitor structure. The capacitor structure, in addition to the metal structure used as the upper electrode, is also comprised of an underlying capacitor dielectric layer, and an underlying polysilicon floating gate structure, used as the lower electrode of the capacitor structure. The creation of the capacitor structure results in performance increases realized via the additional control gate coupling capacitance, obtained via the novel configuration described in this invention.
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Chang Chuan-Li
Chu Wen-Ting
Ho Ming-Chou
Kuo Di-Son
Lin Chang-Song
Ackerman Stephen B.
Booth Richard
Saile George O.
Taiwan Semiconductor Manufacturing Co.
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