Use of a high density plasma source having an electrostatic shie

Details Use of a high density plasma source having an electrostatic shie Use of a high density plasma source having an electrostatic shie

1994-02-14

1995-09-12

Dang, Thi

Adhesive bonding and miscellaneous chemical manufacture

Delaminating processes adapted for specified product

Delaminating in preparation for post processing recycling step

156345, 1566461, 1566571, 1566621, H01L 2100

Patent

active

054494338

ABSTRACT:
A method for etching structures having topography, which structures are comprised of polysilicon disposed over an oxide, by placing an electrostatic shield on a high density source etcher while etching the structures. The etch involves the removal of the polysilicon which overhangs the oxide structure below it, thereby substantially eliminating conductive stringers.

REFERENCES:
patent: 4426246 (1984-01-01), Kravitz et al.
patent: 4918031 (1990-04-01), Flamm et al.
patent: 4990229 (1991-02-01), Campbell et al.
patent: 5234529 (1993-08-01), Johnson
patent: 5277751 (1994-01-01), Ogle
patent: 5336365 (1994-08-01), Goda et al.

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