Upside down bake plate to make vertical and negative...

Radiation imagery chemistry: process – composition – or product th – Imaging affecting physical property of radiation sensitive... – Making electrical device

Reexamination Certificate

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C430S330000, C430S322000

Reexamination Certificate

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07049050

ABSTRACT:
A new method is provided for exposing a semiconductor surface over which a photoresist mask has been created to elevated temperatures. Using conventional methods of wafer temperature exposure, the wafer is mounted on the surface of a hot plate with the active surface of the wafer, over which the photoresist mask has been created, facing upwards. The invention provides a method whereby the conventional upward position of the wafer during temperature exposure is changed. The wafer is, during temperature exposure, placed on the surface of a hot plate, the hot plate is then positioned under an angle with a horizontal direction and may, under the invention, be turned such that the active surface of the wafer, over which a photoresist mask has been formed, faces downwards.

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E.G. Colgan et al. “On-chip Metalizzation Layer for Reflective Light Valves,” IBM Journal of Research & Development, vol. 42, No. 3/4, 1998, IBM Centre for Advanced Studies, Website: www.research.ibm.com/journal/rd/423/colgan.html.
Thermal Reflow of Patterned Resist Without Via Shifting, Sep. 1, 1989, IBM Technical Disclosure Bulletin, vol. 32, pp. 149-152.

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