Static information storage and retrieval – Read/write circuit – Precharge
Patent
1997-04-30
1998-10-13
Le, Vu A.
Static information storage and retrieval
Read/write circuit
Precharge
36518905, 36518907, G11C 700
Patent
active
058222596
ABSTRACT:
The present invention is directed to a redundant UPROM cell incorporating at least one memory element of the EPROM or flash type having a control terminal and a conduction terminal to be biased, a register with inverters connected to the memory element, and MOS transistors connecting the memory element with a reference low voltage power supply. There is provided a precharge network for the conduction terminal of the flash cell and the network incorporates a complementary pair of transistors. The second transistor of the pair is a natural N-channel MOS type. With the UPROM cell is associated a circuit portion for generating a second live output signal to be applied to the control terminal of the second transistor. The circuit portion includes a timing section and a generation section for the second live output signal.
REFERENCES:
patent: 5357458 (1994-10-01), Yu et al.
patent: 5592416 (1997-01-01), Bonitz et al.
patent: 5606523 (1997-02-01), Mirabel
patent: 5671186 (1997-09-01), Igura
Branchetti Maurizio
Ghezzi Stefano
Maccarrone Marco
Le Vu A.
SGS--Thomson Microelectronics S.r.l.
LandOfFree
UPROM cell for low voltage supply does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with UPROM cell for low voltage supply, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and UPROM cell for low voltage supply will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-320342