Unit pixels, image sensor containing unit pixels, and method...

Details Unit pixels, image sensor containing unit pixels, and method... Unit pixels, image sensor containing unit pixels, and method...

2011-04-19

2011-04-19

Tran, Thien F (Department: 2895)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S291000, C257S292000

Reexamination Certificate

active

07928488

ABSTRACT:
Example embodiments provide a unit pixel, an image sensor containing unit pixels, and a method of fabricating unit pixels. The unit pixel may include a semiconductor substrate, photoelectric transducers formed within the semiconductor substrate, multi-layered wiring layers formed on a frontside of the semiconductor substrate, inner lenses formed on a backside of the semiconductor substrate corresponding to the photoelectric transducers, and microlenses formed above the inner lenses.

REFERENCES:
patent: 2006/0169870 (2006-08-01), Silsby et al.
patent: 2007/0153337 (2007-07-01), Kim
patent: 2008/0237761 (2008-10-01), Fu et al.
patent: 3759435 (2006-01-01), None
patent: 1020060116458 (2006-11-01), None
patent: 1020070035202 (2007-03-01), None

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