Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2005-08-16
2005-08-16
Kang, Donghee (Department: 2811)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257S290000, C257S291000, C250S208100, C250S2140RC, C250S214100, C348S296000, C348S301000, C348S308000
Reexamination Certificate
active
06930338
ABSTRACT:
A unit pixel in a CMOS image sensor with a high sensitivity is employed by modifying a unit pixel circuit and a layout. The unit pixel in the CMOS image sensor includes: a photodiode; a transfer transistor disposed between the photodiode and a floating diffusion node, wherein a transfer control signal is applied to a gate; a reset transistor disposed between the photodiode and a VDD terminal, wherein a reset control signal is applied to a gate and a VDD is applied to a drain; a drive transistor of which a drain is connected to the VDD terminal and a gate is connected to the floating diffusion node; a selection transistor of which a drain is connected to a source of the drive transistor and a source is connected to an output terminal, wherein a selection control signal is applied to a gate; and a dummy transistor disposed between the drive transistor and the floating diffusion node, of which a gate is connected to the floating diffusion node.
REFERENCES:
patent: 6215113 (2001-04-01), Chen et al.
patent: 6570144 (2003-05-01), Lee et al.
patent: 2004/0217262 (2004-11-01), Lee
Hynix / Semiconductor Inc.
Kang Donghee
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