Magnetoresistive memory device and method for fabricating...

Details Magnetoresistive memory device and method for fabricating... Magnetoresistive memory device and method for fabricating...

2005-08-09

2005-08-09

Prenty, Mark V. (Department: 2822)

Active solid-state devices (e.g., transistors, solid-state diode

Responsive to non-electrical signal

Magnetic field

C257S422000, C257S760000, C257S900000, C365S158000, C365S171000

Reexamination Certificate

active

06927467

ABSTRACT:
Embodiments of the invention include magnetoresistive memory cells having magnetic focusing spacers are formed on sidewalls thereof. Therefore, magnetic fields generated by a bit line and a digit line are focused by the magnetic focusing spacers and efficiently transferred to the magnetoresistive memory cell. In addition, an interlayer dielectric layer surrounding the magnetoresistive memory cell may be formed of high permeability material, thereby efficiently transferring magnetic field.

REFERENCES:
patent: 5902690 (1999-05-01), Tracy et al.
patent: 6473328 (2002-10-01), Mercaldi
patent: 6504197 (2003-01-01), Minakata et al.
patent: 2004/0061166 (2004-04-01), Kim
patent: 11-238377 (1999-08-01), None
patent: 2001-0100862 (2001-11-01), None
English Language of Abstract for Korean Patent Publication No. 11-238377, Aug. 1999.
English Language of Abstract from PCT application for Korean Patent Publication No. 2001-0100862, Nov. 2001.

Affiliated with

Also associated with

Rating

Magnetoresistive memory device and method for fabricating... does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Magnetoresistive memory device and method for fabricating..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Magnetoresistive memory device and method for fabricating... will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-3494135