Radiant energy – Irradiation of objects or material – Irradiation of semiconductor devices
Reexamination Certificate
2007-01-23
2007-01-23
Berman, Jack (Department: 2881)
Radiant energy
Irradiation of objects or material
Irradiation of semiconductor devices
C250S492200, C250S492300, C250S398000
Reexamination Certificate
active
11021420
ABSTRACT:
A system, method and program product for enhancing dose uniformity during ion implantation are disclosed. The present invention is directed to allowing the use of an at least partially untuned ion beam to obtain a uniform implant by scanning the beam in multiple rotationally-fixed orientations (scan directions) of the target at variable or non-uniform scan velocities. The non-uniform scan velocities are dictated by a scan velocity profile that is generated based on the ion beam profile and/or the scan direction. The beam can be of any size, shape or tuning. A platen holding a wafer is rotated to a new desired rotationally-fixed orientation after a scan, and a subsequent scan occurs at the same scan velocity profile or a different scan velocity profile. Also included is a method, system and program product for conducting a uniform dose ion implantation in which the target is rotated and tilted about greater than one axes relative to the ion beam.
REFERENCES:
patent: 6677599 (2004-01-01), Berrian
patent: 2001/0032937 (2001-10-01), Berrian
Lu Jun
Olson Joseph C.
Renau Anthony
Smatlak Donna L.
Berman Jack
Hashmi Zia R.
Varian Semiconductor Equipment Associates Inc.
Varian Semiconductor Equipment Associates, Inc.
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