Etching a substrate: processes – Gas phase etching of substrate
Reexamination Certificate
2008-05-13
2008-05-13
Olsen, Allan (Department: 1792)
Etching a substrate: processes
Gas phase etching of substrate
C216S067000, C156S345290, C156S345330
Reexamination Certificate
active
10642083
ABSTRACT:
Etching a layer over a substrate is provided. The substrate is placed in a plasma processing chamber. A first gas is provided to an inner zone within the plasma processing chamber. A second gas is provided to the outer zone within the plasma processing chamber, where the outer zone surrounds the inner zone and the first gas is different than the second gas. Plasmas are simultaneously generated from the first gas and second gas. The layer is etched, where the layer is etched by the plasmas from the first gas and second gas.
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Denty, Jr. William M.
Kadkhodayan Babak
Larson Dean J.
Loewenhardt Peter
Su Xingcai
Beyer Law Group LLP
LAM Research Corporation
Olsen Allan
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