Uniform distribution of reactants in a device layer

Details Uniform distribution of reactants in a device layer Uniform distribution of reactants in a device layer

1996-12-18

1998-09-15

Bowers, Jr., Charles L.

Semiconductor device manufacturing: process

Coating of substrate containing semiconductor region or of...

438778, 438760, 438782, 438784, 4272553, 4272555, H01L 21316

Patent

active

058077928

ABSTRACT:
A method and apparatus for forming a multi-constituent device layer on a wafer surface are disclosed. The multi-constituent device layer is formed by flowing a first chemistry comprising a first constituent and a second chemistry comprising a second constituent via a segmented delivery system into a reaction chamber. The reaction chamber comprises a susceptor for supporting and rotating the wafers. The segmented delivery system comprises alternating first and second segments into which the first and second chemistries, respectively, are flowed. The first segments comprise an area that is greater than an area of the second segments by an amount sufficient to effectively reduce the diffusion path of the first constituent. Reducing the diffusion path of the first constituent results in a more uniform distribution of the first constituent within the device layer.

REFERENCES:
patent: 4976996 (1990-12-01), Monkowski et al.
patent: 5490114 (1996-02-01), Butler et al.
patent: 5532970 (1996-07-01), Butler et al.
patent: 5539349 (1996-07-01), Roy
patent: 5559752 (1996-09-01), Stephens, Jr. et al.
Tedder, Laura et al., "Catalytic Effect of Phosphine on the Deposition of Phosphosilicote Glass from Tetratoxysilane", Appl. Phys. Lett., 62 (7), 15 Feb. 1993.
Tischler et al., "Growth and Characterization of Compound Semiconductors by Atomic Layer Epitaxy", Journal of Crystal Growth, 77 (1986) 89-94, 1986.
Sumakeris, J. et al., "Layer-by-Layer Epitaxial Growth of GaN at Low Temperatures", 2194 Thin Solid Films 225 (1993) Mar. 25, No. 1/2, Lausanne, CH, 1993.

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