Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having insulated gate
Reexamination Certificate
2007-01-12
2009-02-24
Lee, Hsien-ming (Department: 2823)
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
Having insulated gate
C438S511000, C438S530000, C438S938000, C252S639000
Reexamination Certificate
active
07494886
ABSTRACT:
A method for achieving uniaxial strain on originally biaxial-strained thin films after uniaxial strain relaxation induced by ion implantation is provided. The biaxial-strained thin film receives ion implantation after being covered by a patterned implant block structure. The strain in the uncovered region is relaxed by ion implantation, which induces the lateral strain relaxation in the covered region. When the implant block structure is narrow (dimension is comparable to the film thickness), the original biaxial strain will relax uniaxially in the lateral direction.
REFERENCES:
patent: 6689671 (2004-02-01), Yu et al.
patent: 7071046 (2006-07-01), Yang et al.
patent: 2004/0227187 (2004-11-01), Cheng et al.
patent: 2005/0139929 (2005-06-01), Rost
patent: 2005/0205934 (2005-09-01), Lochtefeld et al.
patent: 2005/0272188 (2005-12-01), Yeo et al.
patent: 2005/0280051 (2005-12-01), Chidambarrao et al.
patent: 2005/0285187 (2005-12-01), Bryant et al.
patent: 2006/0003561 (2006-01-01), Goktepeli
patent: 2007/0045729 (2007-03-01), Hoentschel et al.
patent: 2007/0145430 (2007-06-01), Sandhu et al.
patent: 2007/0202653 (2007-08-01), Hoentschel et al.
patent: 2007/0215859 (2007-09-01), Clifton
patent: 2007/0254441 (2007-11-01), Wei et al.
patent: 2004095552 (2004-11-01), None
patent: 2004095553 (2004-11-01), None
Ren Zhibin
Saenger Katherine L.
Yin Haizhou
International Business Machines - Corporation
Lee Hsien-ming
Parendo Kevin A
Scully , Scott, Murphy & Presser, P.C.
Trepp, Esq. Robert M.
LandOfFree
Uniaxial strain relaxation of biaxial-strained thin films... does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Uniaxial strain relaxation of biaxial-strained thin films..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Uniaxial strain relaxation of biaxial-strained thin films... will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-4114007