Undoped oxide liner/BPSG for improved data retention

Details Undoped oxide liner/BPSG for improved data retention Undoped oxide liner/BPSG for improved data retention

2006-04-04

2006-04-04

Nelms, David (Department: 2818)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S314000

Reexamination Certificate

active

07023046

ABSTRACT:
Semiconductor devices with improved data retention are formed by depositing an undoped oxide liner on spaced apart transistors followed by in situ deposition of a BPSG layer. Embodiments include depositing an undoped silicon oxide liner derived from TEOS, as at a thickness of 400 Å to 600 Å, on transistors of a non-volatile semiconductor device, as by sub-atmospheric chemical vapor deposition, followed by depositing the BPSG layer in the same deposition chamber.

REFERENCES:
patent: 5840607 (1998-11-01), Yeh et al.
patent: 5897354 (1999-04-01), Kachelmeier
patent: 6080639 (2000-06-01), Huang et al.
patent: 2003/0003658 (2003-01-01), Tseng et al.

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