Under-bond pad structures for integrated circuit devices

Details Under-bond pad structures for integrated circuit devices Under-bond pad structures for integrated circuit devices

2008-06-10

2008-06-10

Andujar, Leonardo (Department: 2826)

Active solid-state devices (e.g., transistors, solid-state diode

Combined with electrical contact or lead

Wire contact, lead, or bond

C257SE23068

Reexamination Certificate

active

07385297

ABSTRACT:
An under bond pad structure is described for integrated circuit dice are that have active circuits located below at least some of the bond pads. The metallization layers interconnection structures within the die are arranged so that electrically conductive vias do not extend between the bond pads and any underlying metallization layer in a region that overlies an active circuit. In some embodiments, no conductive vias are provided between any of the metallization layers in regions that underlie the bond pads and overlie an active circuit. The described arrangements significantly improve the resistance to cracking in the dielectric layers beneath the bond pad (and particularly the topmost intermediate dielectric layer) when wire bonding is used to electrically connect such dice within a package.

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Heinen et al., “Wire Bonds Over Active Circuits,” 1994, IEEE, pp. 922-928.
Application Note from Philips Semiconductor dated May 15, 2003.

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