Ultraviolet blocking layer

Details Ultraviolet blocking layer Ultraviolet blocking layer

2007-01-02

2007-01-02

Lebentritt, Michael (Department: 2812)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S694000, C438S597000, C438S758000, C438S759000, C438S760000, C438S761000, C438S762000, C438S763000, C438S764000, C438S795000, C257S410000, C257S258000, C257S432000, C257S288000, C257S317000, C257SE21530

Reexamination Certificate

active

10858352

ABSTRACT:
Methods and apparatuses are disclosed relating to blocking ultraviolet electromagnetic radiation from a semiconductor. Ultraviolet electromagnetic radiation, such as ultraviolet electromagnetic radiation generated by a plasma process, which may otherwise damage a semiconductor can be blocked from one or more layers below an ultraviolet blocking layer.

REFERENCES:
patent: 5858870 (1999-01-01), Zheng et al.
patent: 5869394 (1999-02-01), Chen et al.
patent: 6017780 (2000-01-01), Roy
patent: 6087278 (2000-07-01), Kim et al.
patent: 6274514 (2001-08-01), Jang et al.
patent: 6458722 (2002-10-01), Kapoor et al.
patent: 6475895 (2002-11-01), Mei et al.
patent: 6521922 (2003-02-01), Huang et al.
patent: 6890865 (2005-05-01), Yin et al.
patent: 2003/0092284 (2003-05-01), Huang et al.
patent: 2003/0168001 (2003-09-01), Sneh
patent: 2003/0181030 (2003-09-01), Hsu et al.
patent: 2003/0211725 (2003-11-01), Chung et al.
patent: 2004/0005781 (2004-01-01), Huang et al.
patent: 2005/0006712 (2005-01-01), Ngo et al.
Dori, Leonello, et al., “Optimized Silicon-Rich Oxide (SRO) Deposition Process for 5-V-Only Flash EEPROM Applications,” IEEE Electron Device Letters 14(6) (Jun. 1993) 283-285.
Shuto, Susumu, et al., “UV-blocking technology to reduce plasma-induced transistor damage in ferrorelectric devices with low hydrogen resistance,” IEEE, 37th Annual International Reliability Physics Symp, 1999, 356-361.
Ashburn, S. P. et al., Degradation of Deep Sub-micron Isolation by Vacuum Ultraviolet Radiation from Low Temperature Back End Plasma-Assisted Processes, IEEE, IEDM, 1997, pp. 449-452.
Song, Seung-Chul et al., Avoiding Plasma induced Damage to Gate Oxide with Conductive Top Film (CTF) on PECVD Contact Etch Stop Layer, 2002 Symposium on VLSI Technology Digest of Technical Papers, pp. 72-73.
Thomas, N. et al., UV-Shifted Durable Silver Coating for Astronomical Mirrors, Submitted to Astronomical Telescopes and Instrumentation, Munich, Germany, Mar. 27-31, 2000, 14 pp.

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