Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2007-08-15
2010-02-09
Dang, Phuc T (Department: 2892)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257S370000, C257S378000, C438S199000, C438S204000
Reexamination Certificate
active
07659583
ABSTRACT:
An oxynitride pad layer and a masking layer are formed on an ultrathin semiconductor-on-insulator substrate containing a top semiconductor layer comprising silicon. A first portion of a shallow trench is patterned in a top semiconductor layer by lithographic masking of an NFET region and an etch, in which exposed portions of the buried insulator layer is recessed and the top semiconductor layer is undercut. A thick thermal silicon oxide liner is formed on the exposed sidewalls and bottom peripheral surfaces of a PFET active area to apply a high laterally compressive stress. A second portion of the shallow trench is formed by lithographic masking of a PFET region including the PFET active area. A thin thermal silicon oxide or no thermal silicon oxide is formed on exposed sidewalls of the NFET active area, which is subjected to a low lateral compressive stress or no lateral compressive stress.
REFERENCES:
patent: 7547641 (2009-06-01), Ieong et al.
patent: 2005/0148133 (2005-07-01), Chen et al.
Ren Zhibin
Shahidi Ghavam
Singh Dinkar V.
Sleight Jeffrey W.
Wang Xinhui
Alexanian Vazken
Dang Phuc T
International Business Machines - Corporation
Scully , Scott, Murphy & Presser, P.C.
LandOfFree
Ultrathin SOI CMOS devices employing differential STI liners does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Ultrathin SOI CMOS devices employing differential STI liners, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Ultrathin SOI CMOS devices employing differential STI liners will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-4179953